VRF152E VRF152Emp 50v, 150w, 175mhz features ? enhanced package for 30% higher p d ? improved ruggedness v (br)dss = 130v ? 150w with 22db typical gain @ 30mhz, 50v ? 150w with 14db typical gain @ 175mhz, 50v ? excellent stability & low imd ? available in matched parts ? 30:1 load vswr capability at speci ed operating conditions ? nitride passivated ? refractory gold metallization ? drop in replacement for sd2941-10 ? rohs compliant symbol parameter VRF152E(mp) unit v dss drain-source voltage 130 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 390 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 50ma) 130 v r ds(on) drain-source on-state resistance 1 (v gs = 10v, i d = 10a) 0.13 0.20 ohms i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 50 a i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 5.0 6.2 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4956 rev b 9-2010 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.45 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. m174a the VRF152E is a thermally-enhanced version of the vrf152. it is a gold- metallized silicon n-channel rf power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
10 100 1000 0 20 40 60 80 100 120 VRF152E(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 383 pf c oss output capacitance v ds = 50v 215 c rss reverse transfer capacitance f = 1mhz 20 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 18 22 db g ps f = 175mhz, v dd = 50v, i dq = 250ma, p out = 150w 14 d f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 50 % imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 1 -30 dbc imd (d11) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep -60 f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 30:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 1 10 30 1 10 100 1000 20 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 0 4 8 12 16 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) v gs = 5v 6v 7v 8v 9v 10v 15v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) dc line i dmax t j = 125c t c = 75c typical performance curves pdmax 13v 050-4956 rev b 9-2010
VRF152E(mp) 16 18 20 22 24 26 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 50 100 150 200 250 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 0 0.2 0.4 0.6 0.8 1 1.2 1.4 output power (watts pep) figure 6. gain and ef ciency vs p out 30mhz ef ciency and gain output power input power (watts pep) figure 7. p out versus p in typical performance curves vdd=50v, idq = 250ma, freq=30mhz d = 0.9 8 10 12 14 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 0 50 100 150 200 250 0 50 100 150 200 250 0 5 10 50 20 output power (watts pep) figure 8. gain and ef ciency vs p out 175mhz ef ciency and gain output power input power (watts pep) figure 9. p out versus p in vdd=50v, idq = 250ma, freq=175mhz 050-4956 rev b 9-2010
VRF152E(mp) 30 mhz test circuit 175 mhz test circuit 050-4956 rev b 9-2010
VRF152E(mp) a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain .5? soe package outline all dimensions are .005 dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 050-4956 rev b 9-2010 adding mp at the end of p/n speci es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%.
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